Part Number | CSD23201W10 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Murata |
Description | MOSFET P-CH 12V 2.2A 4DSBGA |
Series | NexFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 2.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 2.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 325pF @ 6V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Rds On (Max) @ Id, Vgs | 82 mOhm @ 500mA, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-DSBGA (1x1) |
Package / Case | 4-UFBGA, DSBGA |
Image |
CSD23201W10
MU
6286
0.13
HK HEQING ELECTRONICS LIMITED
CSD23201W10
MURUTA
5703
0.9725
KYO Inc.
CSD23201W10
Murat
4293
1.815
Cicotex Electronics (HK) Limited
CSD23201W10
MUARTA
9959
2.6575
Huajiaxin Electronic Technology (Hong Kong) Co., Limited
CSD23201W10
Murata
2888
3.5
CIS Ltd (CHECK IC SOLUTION LIMITED)