(4/5) based on 10 customer reviews
Description
MOSFET 2N-CH 30V 8DFN Series: - FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25～C: 11.3A, 18.1A Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250米A Gate Charge (Qg) @ Vgs: 22.2nC @ 10V Input Capacitance (Ciss) @ Vds: 1153pF @ 15V Power - Max: 1.1W Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6)
| Part Number | NTMFD4C86NT1G |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Murata |
| Description | MOSFET 2N-CH 30V 8DFN |
| Series | - |
| Packaging | Cut Tape (CT) |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 11.3A, 18.1A |
| Rds On (Max) @ Id, Vgs | 5.4 mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 22.2nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1153pF @ 15V |
| Power - Max | 1.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-DFN (5x6) |
| Image |  |
NTMFD4C86NT1G
MU
36500
1.78
Ysx Tech Co., Limited
NTMFD4C86NT1G
MURUTA
100000
2.67
VBsemi Electronics Co., Limited
NTMFD4C86NT1G
Murat
9654
3.56
HK HEQING ELECTRONICS LIMITED
NTMFD4C86NT1G
MUARTA
7520
4.45
ONSTAR ELECTRONICS CO., LIMITED
NTMFD4C86NT1G
Murata
4000
5.34
Yingxinyuan INT'L (Group) Limited
