Part Number | IRF5210LPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Murata |
Description | MOSFET P-CH 100V 38A TO-262 |
Series | HEXFET |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 230nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2780pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 3.1W (Ta), 170W (Tc) |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 38A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-262 |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
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