Part Number | MTD6N20ET4 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Murata |
Description | MOSFET N-CH 200V 6A DPAK |
Series | - |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 480pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.75W (Ta), 50W (Tc) |
Rds On (Max) @ Id, Vgs | 700 mOhm @ 3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
MTD6N20ET4
MU
65500
0.24
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
MTD6N20ET4
MURUTA
206016
1.0375
Shenzhen hsw Technology Co., Ltd
MTD6N20ET4
Murat
45500
1.835
Analog Technology Limited
MTD6N20ET4
MUARTA
49850
2.6325
Z.H.T TECHNOLOGY HK LIMITED
MTD6N20ET4
Murata
1860
3.43
Pacific Corporation