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Description
Publication Order Number: NGTB40N120FL3W/D. NGTB40N120FL3WG . IGBT - Ultra Field Stop. This Insulated Gate Bipolar Transistor (IGBT) features a robust NGTB40N120FL3WG . Pb-free. Halide free. Active. 1200. 40. 1.7. 3. 1.1. 1.6. 86. 12. 212. 454. Yes. TO-. 247-3. For more information please contact your local Dec 17, 2015 This application note explains the most common related issues for the identification of suitable gate resistors for power electronic devices.
| Part Number | NGTB40N120FL3WG |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - IGBTs - Single |
| Brand | Murata |
| Description | IGBT 1200V 160A TO247 |
| Series | - |
| Packaging | Tube |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 160A |
| Current - Collector Pulsed (Icm) | 160A |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 40A |
| Power - Max | 454W |
| Switching Energy | 1.6mJ (on), 1.1mJ (off) |
| Input Type | Standard |
| Gate Charge | 212nC |
| Td (on/off) @ 25°C | 18ns/145ns |
| Test Condition | 600V, 40A, 10 Ohm, 15V |
| Reverse Recovery Time (trr) | 136ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
| Image |  |
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