Part Number | NTMFD4C86NT1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Murata |
Description | MOSFET 2N-CH 30V 8DFN |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | 2 N-Channel (Dual) Asymmetrical |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 11.3A, 18.1A |
Rds On (Max) @ Id, Vgs | 5.4 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 22.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1153pF @ 15V |
Power - Max | 1.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Supplier Device Package | 8-DFN (5x6) |
Image |
NTMFD4C86NT1G
MU
2636
0.97
Ysx Tech Co., Limited
NTMFD4C86NT1G
MURUTA
1185
1.515
VBsemi Electronics Co., Limited
NTMFD4C86NT1G
Murat
4853
2.06
HK HEQING ELECTRONICS LIMITED
NTMFD4C86NT1G
MUARTA
7660
2.605
ONSTAR ELECTRONICS CO., LIMITED
NTMFD4C86NT1G
Murata
1741
3.15
Yingxinyuan INT'L (Group) Limited