Part Number | RQ3E180AJTB |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Murata |
Description | MOSFET N-CH 30V 18A HSMR8 |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 11mA |
Gate Charge (Qg) (Max) @ Vgs | 39nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 4290pF @ 15V |
Vgs (Max) | ±12V |
FET Feature | - |
Power Dissipation (Max) | 2W (Ta), 30W (Tc) |
Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 18A, 4.5V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-HSMT (3.2x3) |
Package / Case | 8-PowerVDFN |
Image |
RQ3E180AJTB
MU
20002
0.35
HK HEQING ELECTRONICS LIMITED
RQ3E180AJTB
MURUTA
15171
1.4
ONSTAR ELECTRONICS CO., LIMITED
RQ3E180AJTB
Murat
5181
2.45
Gallop Great Holdings (Hong Kong) Limited
RQ3E180AJTB
MUARTA
22502
3.5
CIS Ltd (CHECK IC SOLUTION LIMITED)
RQ3E180AJTB
Murata
19605
4.55
Yingxinyuan INT'L (Group) Limited