Part Number | SI2333DST1E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Murata |
Description | MOSFET P-CH 12V 4.1A SOT23-3 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 4.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 6V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 750mW (Ta) |
Rds On (Max) @ Id, Vgs | 32 mOhm @ 5.3A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 (TO-236) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
Hot Offer
SI2333DS-T1-E3
Murata
1612
4.76
Xinyihui Electronic Technology Limited
SI2333DS-T1-E3
MU
7586
0.24
SUNTOP SEMICONDUCTOR CO., LIMITED
SI2333DS-T1-E3
MURUTA
7842
1.37
Cicotex Electronics (HK) Limited
SI2333DST1E3
Murat
3898
2.5
Semic Pte. Ltd
SI2333DS-T1-E3
MUARTA
9790
3.63
Belt (HK) Electronics Co