Part Number | SI9410BDY-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Murata |
Description | MOSFET N-CH 30V 6.2A 8SOIC |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 6.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta) |
Rds On (Max) @ Id, Vgs | 24 mOhm @ 8.1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
Si9410BDY-T1-GE3
MU
4045
0.74
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI9410BDY-T1-GE3
MURUTA
1000
1.5725
MY Group (Asia) Limited
Si9410BDY-T1-GE3
Murat
75514
2.405
AIC Semiconductor Co., Limited
Si9410BDY-T1-GE3
MUARTA
21179
3.2375
HongKong Wanghua Technology Limited
SI9410BDY-T1-GE3
Murata
2500
4.07
HK SEN YING TAI TECHNOLOGY CO., LIMITED