Description
Oct 12, 2012 1/22. 22. STB21N90K5, STF21N90K5, STP21N90K5,. STW21N90K5 . N-channel 900 V, 0.25 typ., 18.5 A Zener-protected SuperMESH 5. Oct 16, 2015 Mfr Site. Date. STW21N90K5 . R1LW*VJ9LB52. A. SHENZHEN B/E. 2015-10-16. Amount. UoM. Unit type. ST ECOPACK Grade. 4430.00 mg. Feb 27, 2017 L= 470.0 H. DCR= 1.7 Ohm. 1. $0.42. CLF7045 86 mm2. 11. M1. STMicroelectronics. STW21N90K5 . VdsMax= 900.0 V. IdsMax= 18.5 Amps. 1. Jul 21, 2016 19. M1. STMicroelectronics. STW21N90K5 . VdsMax= 900.0 V. IdsMax= 18.5 Amps. 1. $3.94. TO-247 123 mm2. 20. M2. Infineon Technologies.
Part Number | STW21N90K5 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Murata |
Description | MOSFET N-CH 900V 18.5A TO-247 |
Series | SuperMESH5 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 18.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1645pF @ 100V |
Vgs (Max) | ±30V |
FET Feature | Current Sensing |
Power Dissipation (Max) | 250W (Tc) |
Rds On (Max) @ Id, Vgs | 299 mOhm @ 9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |
Image |
Hot Offer
STW21N90K5
MUARTA
3200
6.0975
HK Hongtaiyu Electron Limited
STW21N90K5
Murata
950
7.56
INKSON LIMITED
STW21N90K5
MU
27173
1.71
SHENZHEN NEW ENERGY ELECTRONIC TECH.,LIMITED
STW21N90K5
MURUTA
3000
3.1725
Corich International Ltd.
STW21N90K5
Murat
55652
4.635
Innovation Best Electronics Technology Limited