Description
MOSFET 2N-CH 30V 5.7A 8SOIC Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 5.7A Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250米A Gate Charge (Qg) @ Vgs: 12.9nC @ 10V Input Capacitance (Ciss) @ Vds: 608pF @ 15V Power - Max: 1.8W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO
Part Number | ZXMN3F31DN8TA |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Murata |
Description | MOSFET 2N-CH 30V 5.7A 8SOIC |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 5.7A |
Rds On (Max) @ Id, Vgs | 24 mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12.9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 608pF @ 15V |
Power - Max | 1.8W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
ZXMN3F31DN8TA
MU
20000
1.57
SUNTOP SEMICONDUCTOR CO., LIMITED
ZXMN3F31DN8TA
MURUTA
28500
2.69
HK HEQING ELECTRONICS LIMITED
ZXMN3F31DN8TA
Murat
500
3.81
SEHOT CO., LIMITED
ZXMN3F31DN8TA
MUARTA
11700
4.93
CIS Ltd (CHECK IC SOLUTION LIMITED)
ZXMN3F31DN8TA
Murata
25868
6.05
N&S Electronic Co., Limited